Colloquium - Joel Varley (Lawrence Livermore) - Atomistic Simulations of Point Defects in Semiconductors – Their Behavior and Consequences

Image
Joel Varley
February 8, 2022
3:45PM - 4:45PM
Location
Virtual Zoom link below

Date Range
Add to Calendar 2022-02-08 15:45:00 2022-02-08 16:45:00 Colloquium - Joel Varley (Lawrence Livermore) - Atomistic Simulations of Point Defects in Semiconductors – Their Behavior and Consequences Atomistic Simulations of Point Defects in Semiconductors – Their Behavior and Consequences Dr. Joel Varley Lawrence Livermore National Lab Virtual only Faculty Host: Leonard J. Brillson Abstract: Deviations from ideality make things interesting and in the case of semiconductors and insulators, imperfections at the atomic scale largely determine their macroscopic optical and electrical properties. First-principles calculations such as those based on density functional theory provide a novel tool to investigate the origins and consequences of these defects, such as the incorporation of unintentional impurities, intentional dopants, or missing or “misplaced” atoms that may occur during growth or processing. We discuss several examples of how theory can be used to understand and complement experimental characterization, particularly in emerging semiconducting oxide materials.   Bio: Joel received a B.S. in physics at University of North Carolina at Chapel Hill and a PhD in physics at UCSB, where his work focused on understanding point defects in semiconductors with an emphasis on wide-band-gap semiconducting oxides.  He then worked in the SUNCAT Center for Interface Science and Catalysis at Stanford University on the electrochemical conversion of CO2 and N2 for sustainable fuel and fertilizer production, before joining LLNL in 2011 as part of the Quantum Simulations Group, where he is now staff. While at LLNL, he has continued to study how atomic defects influence the electronic structure and fundamental properties in a number of relevant technologies including photovoltaics, catalysts, batteries, radiation detectors, and next-generation (opto)electronic devices.     Please use the Zoom link below to attend virtually: https://osu.zoom.us/j/94858307115?pwd=K0JDMTROWVhIOUp6bU1sU0prZjNUZz09 Meeting ID: 948 5830 7115 Password: PRB1080   Virtual Zoom link below Department of Physics physics@osu.edu America/New_York public
Description

Atomistic Simulations of Point Defects in Semiconductors – Their Behavior and Consequences

Dr. Joel Varley
Lawrence Livermore National Lab

Virtual only

Faculty Host: Leonard J. Brillson

Joel Varley

Abstract: Deviations from ideality make things interesting and in the case of semiconductors and insulators, imperfections at the atomic scale largely determine their macroscopic optical and electrical properties. First-principles calculations such as those based on density functional theory provide a novel tool to investigate the origins and consequences of these defects, such as the incorporation of unintentional impurities, intentional dopants, or missing or “misplaced” atoms that may occur during growth or processing. We discuss several examples of how theory can be used to understand and complement experimental characterization, particularly in emerging semiconducting oxide materials.

 

Bio: Joel received a B.S. in physics at University of North Carolina at Chapel Hill and a PhD in physics at UCSB, where his work focused on understanding point defects in semiconductors with an emphasis on wide-band-gap semiconducting oxides.  He then worked in the SUNCAT Center for Interface Science and Catalysis at Stanford University on the electrochemical conversion of CO2 and N2 for sustainable fuel and fertilizer production, before joining LLNL in 2011 as part of the Quantum Simulations Group, where he is now staff. While at LLNL, he has continued to study how atomic defects influence the electronic structure and fundamental properties in a number of relevant technologies including photovoltaics, catalysts, batteries, radiation detectors, and next-generation (opto)electronic devices.

 

 

Please use the Zoom link below to attend virtually:

https://osu.zoom.us/j/94858307115?pwd=K0JDMTROWVhIOUp6bU1sU0prZjNUZz09

Meeting ID: 948 5830 7115

Password: PRB1080