Colloquium - James Hone (Columbia University) - Techniques and Materials for van der Waals Heterostructures

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James Hone (Columbia University) 12/4/18 colloquium speaker
December 4, 2018
3:45PM - 4:45PM
Location
1080 Physics Research Building - Smith Seminar Room - reception at 3:30 pm in the Atrium

Date Range
Add to Calendar 2018-12-04 15:45:00 2018-12-04 16:45:00 Colloquium - James Hone (Columbia University) - Techniques and Materials for van der Waals Heterostructures

Artificial van der Waals heterostructures of two-dimensional materials offer the possibility of creating layered structures with a wide variety of starting materials and control of composition at the single atomic layer limit. To create such structures, developed a van der Waals transfer technique which largely eliminates interfacial contamination. We have used this technique to encapsulate 2D materials within crystalline h-BN with nearly perfect interfaces, which allows for near-intrinsic behavior in materials such as graphene, transition metal dichalcogenides semiconductors, and 2D superconductors. However, significant challenges toward functional heterostructures remain. This talk will detail our recent progress in the materials engineering for van der Waals heterostructures, including control over disorder, achieving robust electrical contacts, controlling interlayer rotation angle, and improving the quality of the constituent materials.

1080 Physics Research Building - Smith Seminar Room - reception at 3:30 pm in the Atrium Department of Physics physics@osu.edu America/New_York public
Description

Artificial van der Waals heterostructures of two-dimensional materials offer the possibility of creating layered structures with a wide variety of starting materials and control of composition at the single atomic layer limit. To create such structures, developed a van der Waals transfer technique which largely eliminates interfacial contamination. We have used this technique to encapsulate 2D materials within crystalline h-BN with nearly perfect interfaces, which allows for near-intrinsic behavior in materials such as graphene, transition metal dichalcogenides semiconductors, and 2D superconductors. However, significant challenges toward functional heterostructures remain. This talk will detail our recent progress in the materials engineering for van der Waals heterostructures, including control over disorder, achieving robust electrical contacts, controlling interlayer rotation angle, and improving the quality of the constituent materials.