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Colloquium - Feng Wang (UC Berkeley) - Engineering Correlation and Topology in Two-Dimensional Moiré Superlattices

Feng Wang (UC Berkeley) 11/5/19 colloquium speaker
November 5, 2019
3:45PM - 4:45PM
1080 Physics Research Building, Smith Seminar room - reception at 3:30pm in front of the SSR

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Add to Calendar 2019-11-05 15:45:00 2019-11-05 16:45:00 Colloquium - Feng Wang (UC Berkeley) - Engineering Correlation and Topology in Two-Dimensional Moiré Superlattices Van der Waals heterostructures of atomically thin crystals offer an exciting new platform to design novel electronic and optical properties. In this talk, I will describe a general approach to engineer correlated physics using moiré superlattice in two dimensional heterostructures. One example is the tunable Mott insulator realized in the ABC trilayer graphene (TLG) and hexagonal boron nitride (hBN) heterostructure with a moiré superlattice, where the moiré leads to narrow electronic minibands. Both the bandwidth and the topology of the electronic band can be controlled in this moiré superlattice. It allows us to realize a plethora of correlated phenomena, ranging from Mott insulator, superconductivity, orbital ferromagnetism, and Chern insulator, all in a single device by tuning the electrical field and carrier doping.  1080 Physics Research Building, Smith Seminar room - reception at 3:30pm in front of the SSR Department of Physics physics@osu.edu America/New_York public

Van der Waals heterostructures of atomically thin crystals offer an exciting new platform to design novel electronic and optical properties. In this talk, I will describe a general approach to engineer correlated physics using moiré superlattice in two dimensional heterostructures. One example is the tunable Mott insulator realized in the ABC trilayer graphene (TLG) and hexagonal boron nitride (hBN) heterostructure with a moiré superlattice, where the moiré leads to narrow electronic minibands. Both the bandwidth and the topology of the electronic band can be controlled in this moiré superlattice. It allows us to realize a plethora of correlated phenomena, ranging from Mott insulator, superconductivity, orbital ferromagnetism, and Chern insulator, all in a single device by tuning the electrical field and carrier doping.